GeneSiC Semiconductor G3R40MT12J

安装类型

表面贴装

包装/外壳

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

供应商器件包装

TO-263-7

Continuous Drain Current Id

75A

Package

Tube

Base Product Number

G3R40

Current - Continuous Drain (Id) @ 25℃

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

厂商

GeneSiC Semiconductor

Power Dissipation (Max)

374W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

330 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 15 V

Id - Continuous Drain Current

66 A

Rds On - Drain-Source Resistance

40 mOhms

Qg - Gate Charge

88 nC

Channel Mode

Enhancement

Mounting Styles

SMD/SMT

Minimum Operating Temperature

- 55 C

操作温度

-55°C ~ 175°C (TJ)

系列

G3R™

技术

SiCFET (Silicon Carbide)

通道数量

1 Channel

功率耗散

374W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

48mOhm @ 35A, 15V

不同 Id 时 Vgs(th)（最大值）

2.69V @ 10mA

输入电容(Ciss)(Max)@Vds

2929 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

106 nC @ 15 V

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±15V

信道型

N通道

场效应管特性

-