GeneSiC Semiconductor G3R60MT07D

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247-3

厂商

GeneSiC Semiconductor

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

-

Drive Voltage (Max Rds On, Min Rds On)

-

Power Dissipation (Max)

-

Vds - Drain-Source Breakdown Voltage

750 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

171 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 15 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

47 nC

Rds On - Drain-Source Resistance

60 mOhms

Id - Continuous Drain Current

43 A

操作温度

-

通道数量

1 Channel

场效应管类型

-

Rds On(Max)@Id,Vgs

-

不同 Id 时 Vgs(th)（最大值）

-

漏源电压 (Vdss)

750 V

Vgs（最大值）

-

场效应管特性

-