GeneSiC Semiconductor G3R75MT12D

包装/外壳

QFN

安装类型

通孔

供应商器件包装

TO-247-3

Standard Frequency

100

Operating Temp Range

-20C to 70C

Operating Supply Voltage (Max)

2.75(V)

Operating Supply Voltage (Min)

2.25(V)

Programmable

无

Continuous Drain Current Id

41A

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

25 ns

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

182 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 15 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Forward Transconductance - Min

9 S

Channel Mode

Enhancement

Manufacturer

GeneSiC Semiconductor

Brand

GeneSiC Semiconductor

Qg - Gate Charge

47 nC

Rds On - Drain-Source Resistance

75 mOhms

RoHS

Details

Typical Turn-Off Delay Time

15 ns

Id - Continuous Drain Current

36 A

Package

Tube

Base Product Number

G3R75

Current - Continuous Drain (Id) @ 25℃

41A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

厂商

GeneSiC Semiconductor

Power Dissipation (Max)

207W (Tc)

Product Status

活跃

包装

Bulk

系列

G3R

操作温度

-55°C ~ 175°C (TJ)

类型

CLOCK OSCILLATOR

子类别

MOSFETs

技术

SiC

频率稳定性

±10(ppm)

对称性-最大值

55(%)

配置

Single

通道数量

1 Channel

功率耗散

207W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

90mOhm @ 20A, 15V

不同 Id 时 Vgs(th)（最大值）

2.69V @ 7.5mA

输入电容(Ciss)(Max)@Vds

1560 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

54 nC @ 15 V

上升时间

12 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±15V

产品类别

MOSFET

晶体管类型

MOSFET

信道型

N通道

场效应管特性

-

产品

MOSFET

产品类别

MOSFET