GSI Technology GS81302D10E-333I
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GS81302D10E-333I
2984-GS81302D10E-333I
存储器
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大陆
立即发货

DDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
1最小包装量--
GS81302D10E-333I详情
GSI Technology GS81302D10E-333I重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
165
Maximum Clock Rate
333 MHz
Supplier Package
FBGA
Data Rate Architecture
QDR
Typical Operating Supply Voltage
1.8000 V
Minimum Operating Supply Voltage
1.7 V
Timing Type
Synchronous
Number of Words
16 MWords
Number of I/O Lines
9 Bit
Maximum Operating Supply Voltage
1.9 V
Mounting
表面贴装
Moisture Sensitive
有
Factory Pack QuantityFactory Pack Quantity
10
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SigmaQuad-II+
Usage Level
Industrial grade
操作温度
-40 to 100 °C
系列
GS81302D10E
包装
Tray
子类别
Memory & Data Storage
端口的数量
2
建筑学
Pipelined
地址总线宽度
22 Bit
产品类别
SRAM
密度
144 Mbit
筛选水平
Industrial
产品类别
SRAM
GS81302D10E-333I拓展信息
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