GSI Technology GS81302TT07E-400I
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GS81302TT07E-400I
2984-GS81302TT07E-400I
存储器
BGA-165
大陆
立即发货

DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
1最小包装量--
GS81302TT07E-400I详情
GSI Technology GS81302TT07E-400I重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-165
Maximum Clock Rate
400 MHz
Supplier Package
FBGA
Data Rate Architecture
DDR
Typical Operating Supply Voltage
1.8000 V
Minimum Operating Supply Voltage
1.7 V
Timing Type
Synchronous
Number of Words
16 MWords
Number of I/O Lines
8 Bit
Maximum Operating Supply Voltage
1.9 V
Mounting
表面贴装
Moisture Sensitive
有
Maximum Clock Frequency
400 MHz
Maximum Operating Temperature
+ 85 C
Supply Voltage-Max
1.9 V
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
10
Supply Voltage-Min
1.7 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SigmaDDR-II+
Memory Types
DDR-II
Usage Level
Industrial grade
操作温度
-40 to 100 °C
系列
GS81302TT07E
包装
Tray
类型
SigmaDDR-II+ B2
子类别
Memory & Data Storage
引脚数量
165
内存大小
144 Mbit
端口的数量
1
电源电流-最大值
905 mA
建筑学
Pipelined
组织结构
16 M x 8
地址总线宽度
23 Bit
产品类别
SRAM
密度
144 Mbit
筛选水平
Industrial
产品类别
SRAM
GS81302TT07E-400I拓展信息
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