GSI Technology GS8160E18DGT-250IV

包装/外壳

TQFP-100

Maximum Clock Rate

250 MHz

Supplier Package

TQFP

Typical Operating Supply Voltage

1.8, 2.5 V

Minimum Operating Supply Voltage

1.7, 2.3 V

Timing Type

Synchronous

Number of I/O Lines

18 Bit

Maximum Operating Supply Voltage

2, 2.7 V

Moisture Sensitive

有

Maximum Clock Frequency

250 MHz

Maximum Operating Temperature

+ 100 C

Supply Voltage-Max

2.7 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

18

Supply Voltage-Min

1.7 V

Mounting Styles

SMD/SMT

Interface Type

Parallel

Manufacturer

GSI技术

Brand

GSI技术

Tradename

SyncBurst

RoHS

Details

Memory Types

SDR

操作温度

-40 to 85 °C

系列

GS8160E18DGT

包装

Tray

类型

DCD Synchronous Burst

子类别

Memory & Data Storage

引脚数量

100

内存大小

18 Mbit

电源电流-最大值

225 mA, 245 mA

访问时间

5.5

组织结构

1 M x 18

产品类别

SRAM

记忆密度

18

产品类别

SRAM