GSI Technology GS8161E36DGD-150V
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GS8161E36DGD-150V
2984-GS8161E36DGD-150V
存储器
BGA-165
大陆
立即发货

Cache SRAM, 512KX36, 7.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165
1最小包装量--
GS8161E36DGD-150V详情
GSI Technology GS8161E36DGD-150V重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-165
Maximum Clock Rate
133.3@Flow-Through/150@Pipelined MHz
Supplier Package
FBGA
Data Rate Architecture
SDR
Typical Operating Supply Voltage
1.8, 2.5 V
Minimum Operating Supply Voltage
1.7, 2.3 V
Timing Type
Synchronous
Number of Words
512 kWords
Number of I/O Lines
36 Bit
Maximum Operating Supply Voltage
2, 2.7 V
Mounting
表面贴装
Moisture Sensitive
有
Maximum Clock Frequency
150 MHz
Maximum Operating Temperature
+ 70 C
Supply Voltage-Max
2.7 V
Minimum Operating Temperature
0 C
Factory Pack QuantityFactory Pack Quantity
18
Supply Voltage-Min
1.7 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SyncBurst
RoHS
Details
Memory Types
SDR
Usage Level
Commercial grade
操作温度
0 to 70 °C
系列
GS8161E36DGD
包装
Tray
类型
DCD Pipeline/Flow Through
子类别
Memory & Data Storage
引脚数量
165
内存大小
18 Mbit
端口的数量
4
电源电流-最大值
175 mA, 190 mA
访问时间
7.5 ns
建筑学
Flow-Through/Pipelined
组织结构
512 k x 36
地址总线宽度
19 Bit
产品类别
SRAM
密度
18 Mbit
筛选水平
Commercial
产品类别
SRAM
GS8161E36DGD-150V拓展信息
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