GSI Technology GS8161Z36DGD-150V

工厂交货时间

10 Weeks

包装/外壳

BGA-165

表面安装

YES

终端数量

165

Supplier Package

FBGA

Data Rate Architecture

SDR

Typical Operating Supply Voltage

1.8, 2.5 V

Minimum Operating Supply Voltage

1.7, 2.3 V

Timing Type

Synchronous

Number of Words

512 kWords

Number of I/O Lines

36 Bit

Maximum Operating Supply Voltage

2, 2.7 V

Mounting

表面贴装

Moisture Sensitive

有

Maximum Clock Frequency

150 MHz

Maximum Operating Temperature

+ 70 C

Supply Voltage-Max

2.7 V

Minimum Operating Temperature

0 C

Factory Pack QuantityFactory Pack Quantity

18

Supply Voltage-Min

1.7 V

Mounting Styles

SMD/SMT

Interface Type

Parallel

Manufacturer

GSI技术

Brand

GSI技术

Tradename

NBT SRAM

RoHS

Details

Memory Types

SDR

Package Description

LBGA,

Package Style

GRID ARRAY, LOW PROFILE

Number of Words Code

512000

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Access Time-Max

7.5 ns

Operating Temperature-Max

70 °C

Rohs Code

有

Manufacturer Part Number

GS8161Z36DGD-150V

Supply Voltage-Nom (Vsup)

1.8 V

Package Code

LBGA

Package Shape

RECTANGULAR

Part Life Cycle Code

活跃

Ihs Manufacturer

GSI TECHNOLOGY

Risk Rank

5.26

Part Package Code

BGA

Usage Level

Commercial grade

操作温度

0 to 85 °C

系列

GS8161Z36DGD

包装

Tray

ECCN 代码

3A991.B.2.B

类型

NBT

附加功能

FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

HTS代码

8542.32.00.41

子类别

Memory & Data Storage

技术

CMOS

端子位置

BOTTOM

终端形式

BALL

峰值回流焊温度（摄氏度）

未说明

功能数量

1

端子间距

1 mm

Reach合规守则

compliant

引脚数量

165

JESD-30代码

R-PBGA-B165

电源电压-最大值(Vsup)

2 V

温度等级

COMMERCIAL

电源电压-最小值(Vsup)

1.7 V

内存大小

18 Mbit

端口的数量

4

操作模式

SYNCHRONOUS

电源电流-最大值

175 mA, 190 mA

访问时间

7.5 ns

建筑学

Flow-Through/Pipelined

组织结构

512 k x 36

座位高度-最大

1.4 mm

内存宽度

36

产品类别

SRAM

密度

18 Mbit

记忆密度

18874368 bit

筛选水平

Commercial

并行/串行

PARALLEL

内存IC类型

ZBT SRAM

产品类别

SRAM

宽度

13 mm

长度

15 mm