GSI Technology GS816218DD-333IV
- 收藏
- 对比
GS816218DD-333IV
2984-GS816218DD-333IV
存储器
BGA-165
大陆
立即发货

SRAM 1.8/2.5V 1M x 18 18M
1最小包装量--
GS816218DD-333IV详情
GSI Technology GS816218DD-333IV重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-165
引脚数
165
Maximum Clock Frequency
333 MHz
Interface Type
Parallel
Supply Voltage-Min
1.7 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 85 C
Mounting Styles
SMD/SMT
Memory Types
SDR
Moisture Sensitive
有
Factory Pack QuantityFactory Pack Quantity
18
Tradename
SyncBurst
Maximum Clock Rate
200@Flow-Through/333@Pipelined MHz
Supplier Package
FBGA
Data Rate Architecture
SDR
Typical Operating Supply Voltage
1.8, 2.5 V
Minimum Operating Supply Voltage
1.7, 2.3 V
Timing Type
Synchronous
Number of Words
1 MWords
Number of I/O Lines
18 Bit
Maximum Operating Supply Voltage
2, 2.7 V
Mounting
表面贴装
Supply Voltage-Max
2.7 V
Usage Level
Industrial grade
包装
Tray
系列
GS816218DD
操作温度
-40 to 100 °C
类型
Pipeline/Flow Through
内存大小
18 Mbit
端口的数量
2
电源电流-最大值
240 mA, 300 mA
访问时间
5 ns
建筑学
Flow-Through/Pipelined
组织结构
1 M x 18
地址总线宽度
20 Bit
密度
18 Mbit
筛选水平
Industrial
GS816218DD-333IV拓展信息
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology







哦! 它是空的。