GSI Technology GS8162Z18DD-200M
- 收藏
- 对比
GS8162Z18DD-200M
2984-GS8162Z18DD-200M
存储器
BGA-165
大陆
立即发货

ZBT SRAM, 1MX18, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
1最小包装量--
GS8162Z18DD-200M详情
GSI Technology GS8162Z18DD-200M重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-165
引脚数
165
Maximum Clock Rate
153@Flow-Through/200@Pipelined MHz
Supplier Package
FBGA
Typical Operating Supply Voltage
2.5, 3.3 V
Minimum Operating Supply Voltage
2.3, 3 V
Timing Type
Synchronous
Number of I/O Lines
18 Bit
Maximum Operating Supply Voltage
2.7, 3.6 V
Moisture Sensitive
有
Maximum Clock Frequency
200 MHz
Maximum Operating Temperature
+ 125 C
Supply Voltage-Max
3.6 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
36
Supply Voltage-Min
2.3 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
NBT SRAM
Memory Types
SDR
操作温度
-55 to 125 °C
系列
GS8162Z18DD
包装
Tray
类型
NBT Pipeline/Flow Through
子类别
Memory & Data Storage
内存大小
18 Mbit
电源电流-最大值
240 mA, 245 mA
访问时间
6.5@Flow-Through/3@P
组织结构
1 M x 18
产品类别
SRAM
记忆密度
18
产品类别
SRAM
GS8162Z18DD-200M拓展信息
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology







哦! 它是空的。