GSI Technology GS8162Z36DD-200I
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GS8162Z36DD-200I
2984-GS8162Z36DD-200I
存储器
BGA-165
大陆
立即发货

ZBT SRAM, 512KX36, 6.5ns, CMOS, PBGA165, FPBGA-165
1最小包装量--
GS8162Z36DD-200I详情
GSI Technology GS8162Z36DD-200I重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-165
Maximum Clock Rate
153.8@Flow-Through/200@Pipelined MHz
Supplier Package
FBGA
Data Rate Architecture
SDR
Typical Operating Supply Voltage
2.5, 3.3 V
Minimum Operating Supply Voltage
2.3, 3 V
Timing Type
Synchronous
Number of Words
512 kWords
Number of I/O Lines
36 Bit
Maximum Operating Supply Voltage
2.7, 3.6 V
Mounting
表面贴装
Moisture Sensitive
有
Maximum Clock Frequency
200 MHz
Maximum Operating Temperature
+ 85 C
Supply Voltage-Max
3.6 V
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
36
Supply Voltage-Min
2.3 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
NBT SRAM
RoHS
N
Memory Types
SDR
Usage Level
Industrial grade
操作温度
-40 to 100 °C
系列
GS8162Z36DD
包装
Tray
类型
NBT Pipeline/Flow Through
子类别
Memory & Data Storage
引脚数量
165
内存大小
18 Mbit
端口的数量
4
电源电流-最大值
230 mA
访问时间
6.5 ns
建筑学
Flow-Through/Pipelined
组织结构
512 k x 36
地址总线宽度
19 Bit
产品类别
SRAM
密度
18 Mbit
筛选水平
Industrial
产品类别
SRAM
GS8162Z36DD-200I拓展信息
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