GSI Technology GS8320E18AGT-200
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GS8320E18AGT-200
2984-GS8320E18AGT-200
存储器
TQFP-100
大陆
立即发货

Cache SRAM, 2MX18, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
1最小包装量--
GS8320E18AGT-200详情
GSI Technology GS8320E18AGT-200重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TQFP-100
引脚数
100
Maximum Clock Rate
153.8@Flow-Through/200@Pipelined MHz
Supplier Package
TQFP
Typical Operating Supply Voltage
1.8, 2.5 V
Minimum Operating Supply Voltage
1.7, 2.3 V
Timing Type
Synchronous
Number of I/O Lines
18 Bit
Maximum Operating Supply Voltage
2, 2.7 V
Moisture Sensitive
有
Maximum Clock Frequency
200 MHz
Maximum Operating Temperature
+ 70 C
Supply Voltage-Max
3.6 V
Minimum Operating Temperature
0 C
Factory Pack QuantityFactory Pack Quantity
18
Supply Voltage-Min
2.3 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SyncBurst
RoHS
Details
Memory Types
SDR
操作温度
0 to 85 °C
系列
GS8320E18AGT
包装
Tray
类型
Pipeline/Flow Through
子类别
Memory & Data Storage
内存大小
36 Mbit
电源电流-最大值
185 mA, 220 mA
访问时间
6.5@Flow-Through/3@P
组织结构
2 M x 18
产品类别
SRAM
记忆密度
36
产品类别
SRAM
GS8320E18AGT-200拓展信息
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