GSI Technology GS832218AGB-333V
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GS832218AGB-333V
2984-GS832218AGB-333V
存储器
BGA-119
大陆
立即发货

Cache SRAM, 2MX18, 5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119
1最小包装量--
GS832218AGB-333V详情
GSI Technology GS832218AGB-333V重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-119
引脚数
119
Supplier Package
FBGA
Data Rate Architecture
SDR
Typical Operating Supply Voltage
1.8, 2.5 V
Minimum Operating Supply Voltage
1.7, 2.3 V
Timing Type
Synchronous
Number of Words
2 MWords
Number of I/O Lines
18 Bit
Maximum Operating Supply Voltage
2, 2.7 V
Mounting
表面贴装
RoHS
Compliant
Moisture Sensitive
有
Maximum Clock Frequency
333 MHz
Maximum Operating Temperature
+ 70 C
Supply Voltage-Max
2.7 V
Minimum Operating Temperature
0 C
Factory Pack QuantityFactory Pack Quantity
14
Supply Voltage-Min
1.7 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SyncBurst
Memory Types
SDR
Usage Level
Commercial grade
操作温度
0 to 85 °C
包装
Bulk
系列
GS832218AGB
类型
Pipeline/Flow Through
最高工作温度
85 °C
最小工作温度
0 °C
子类别
Memory & Data Storage
内存大小
36 Mbit
端口的数量
2
电源电流-最大值
245 mA, 330 mA
访问时间
5 ns
建筑学
Flow-Through/Pipelined
组织结构
2 M x 18
地址总线宽度
21 b
产品类别
SRAM
密度
36 Mbit
筛选水平
Commercial
产品类别
SRAM
辐射硬化
无
GS832218AGB-333V拓展信息
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