GSI Technology GS8342T06BD-500I

工厂交货时间

10 Weeks

包装/外壳

BGA-165

表面安装

YES

引脚数

165

终端数量

165

Maximum Clock Rate

500 MHz

Supplier Package

FBGA

Data Rate Architecture

DDR

Typical Operating Supply Voltage

1.8000 V

Minimum Operating Supply Voltage

1.7 V

Timing Type

Synchronous

Number of Words

4 MWords

Number of I/O Lines

8 Bit

Maximum Operating Supply Voltage

1.9 V

Mounting

表面贴装

Moisture Sensitive

有

Maximum Clock Frequency

500 MHz

Maximum Operating Temperature

+ 85 C

Supply Voltage-Max

1.9 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

15

Supply Voltage-Min

1.7 V

Mounting Styles

SMD/SMT

Interface Type

Parallel

Manufacturer

GSI技术

Brand

GSI技术

Tradename

SigmaDDR-II+

Memory Types

DDR

Package Style

网格排列

Number of Words Code

4000000

Package Body Material

PLASTIC/EPOXY

Package Equivalence Code

BGA165,11X15,40

Operating Temperature-Min

-40 °C

Access Time-Max

0.45 ns

Operating Temperature-Max

85 °C

Rohs Code

无

Manufacturer Part Number

GS8342T06BD-500I

Clock Frequency-Max (fCLK)

500 MHz

Package Code

BGA

Package Shape

RECTANGULAR

Part Life Cycle Code

活跃

Ihs Manufacturer

GSI TECHNOLOGY

Risk Rank

5.88

Usage Level

Industrial grade

操作温度

-40 to 85 °C

系列

GS8342T06BD

包装

Tray

类型

SigmaQuad-II+

子类别

Memory & Data Storage

技术

CMOS

端子位置

BOTTOM

终端形式

BALL

端子间距

1 mm

Reach合规守则

compliant

JESD-30代码

R-PBGA-B165

资历状况

不合格

电源

1.5/1.8,1.8 V

温度等级

INDUSTRIAL

内存大小

36 Mbit

端口的数量

1

操作模式

SYNCHRONOUS

电源电流-最大值

740 mA

建筑学

Pipelined

组织结构

4 M x 8

输出特性

3-STATE

内存宽度

8

地址总线宽度

21 Bit

产品类别

SRAM

密度

36 Mbit

待机电流-最大值

0.25 A

记忆密度

33554432 bit

筛选水平

Industrial

并行/串行

PARALLEL

I/O类型

COMMON

内存IC类型

标准SRAM

待机电压-最小值

1.7 V

产品类别

SRAM