GSI Technology GS842Z18CB-200M
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GS842Z18CB-200M
2984-GS842Z18CB-200M
存储器
BGA-119
大陆
立即发货

GS842Z18CB-200M datasheet pdf and Memory product details from GSI Technology stock available at utmel
1最小包装量--
GS842Z18CB-200M详情
GSI Technology GS842Z18CB-200M重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
包装/外壳
BGA-119
引脚数
119
Maximum Clock Rate
200 MHz
Supplier Package
FBGA
Typical Operating Supply Voltage
2.5, 3.3 V
Minimum Operating Supply Voltage
2.3, 3 V
Timing Type
Synchronous
Number of I/O Lines
18 Bit
Maximum Operating Supply Voltage
2.7, 3.6 V
Moisture Sensitive
有
Maximum Clock Frequency
200 MHz
Maximum Operating Temperature
+ 125 C
Supply Voltage-Max
3.6 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
84
Supply Voltage-Min
2.3 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
NBT SRAM
Memory Types
SDR
操作温度
-55 to 125 °C
系列
GS842Z18CB
包装
Tray
类型
NBT Pipeline/Flow Through
子类别
Memory & Data Storage
内存大小
4 Mbit
访问时间
6.5
组织结构
256 k x 18
产品类别
SRAM
记忆密度
4
产品类别
SRAM
GS842Z18CB-200M拓展信息
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