GSI Technology GS8640E36GT-167V
- 收藏
- 对比
GS8640E36GT-167V
2984-GS8640E36GT-167V
存储器
TQFP-100
大陆
立即发货

Cache SRAM, 2MX36, 8ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
1最小包装量--
GS8640E36GT-167V详情
GSI Technology GS8640E36GT-167V重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TQFP-100
引脚数
100
Maximum Clock Rate
125@Flow-Through/167@Pipelined MHz
Supplier Package
TQFP
Data Rate Architecture
SDR
Typical Operating Supply Voltage
1.8, 2.5 V
Minimum Operating Supply Voltage
1.7, 2.3 V
Timing Type
Synchronous
Number of Words
2 MWords
Number of I/O Lines
36 Bit
Maximum Operating Supply Voltage
2, 2.7 V
Mounting
表面贴装
Moisture Sensitive
有
Maximum Clock Frequency
167 MHz
Maximum Operating Temperature
+ 70 C
Supply Voltage-Max
2.7 V
Minimum Operating Temperature
0 C
Factory Pack QuantityFactory Pack Quantity
18
Supply Voltage-Min
1.7 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SyncBurst
RoHS
Details
Memory Types
SDR
Usage Level
Commercial grade
操作温度
0 to 70 °C
系列
GS8640E36GT
包装
Tray
类型
DCD
子类别
Memory & Data Storage
内存大小
72 Mbit
端口的数量
4
电源电流-最大值
220 mA, 270 mA
访问时间
8 ns
建筑学
Flow-Through/Pipelined
组织结构
2 M x 36
地址总线宽度
21 Bit
产品类别
SRAM
密度
72 Mbit
筛选水平
Commercial
产品类别
SRAM
GS8640E36GT-167V拓展信息
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology







哦! 它是空的。