GSI Technology GS864236GB-250M
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GS864236GB-250M
2984-GS864236GB-250M
存储器
BGA-119
大陆
立即发货

GS864236GB-250M datasheet pdf and Memory product details from GSI Technology stock available at utmel
1最小包装量--
GS864236GB-250M详情
GSI Technology GS864236GB-250M重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-119
引脚数
119
Maximum Clock Rate
250 MHz
Supplier Package
FBGA
Data Rate Architecture
SDR
Typical Operating Supply Voltage
2.5, 3.3 V
Minimum Operating Supply Voltage
2.3, 3 V
Timing Type
Synchronous
Number of Words
2 MWords
Number of I/O Lines
36 Bit
Maximum Operating Supply Voltage
2.7, 3.6 V
Mounting
表面贴装
Moisture Sensitive
有
Maximum Clock Frequency
250 MHz
Maximum Operating Temperature
+ 125 C
Supply Voltage-Max
3.6 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
14
Supply Voltage-Min
2.3 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SyncBurst
RoHS
Details
Memory Types
SDR
Usage Level
Military grade
操作温度
-55 to 125 °C
系列
GS864236GB
包装
Tray
类型
SCD/DCD Pipeline/Flow Through
子类别
Memory & Data Storage
内存大小
72 Mbit
端口的数量
1
访问时间
6.5 ns
建筑学
Flow-Through/Pipelined
组织结构
2 M x 36
地址总线宽度
21 Bit
产品类别
SRAM
密度
72 Mbit
筛选水平
Military
产品类别
SRAM
GS864236GB-250M拓展信息
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