GSI Technology GS864418E-133IV
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GS864418E-133IV
2984-GS864418E-133IV
存储器
BGA-165
大陆
立即发货

Cache SRAM, 4MX18, 8.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
1最小包装量--
GS864418E-133IV详情
GSI Technology GS864418E-133IV重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-165
引脚数
165
Mounting
表面贴装
Maximum Operating Supply Voltage
2, 2.7 V
Number of I/O Lines
18 Bit
Number of Words
4 MWords
Timing Type
Synchronous
Minimum Operating Supply Voltage
1.7, 2.3 V
Typical Operating Supply Voltage
1.8, 2.5 V
Data Rate Architecture
SDR
Supplier Package
FBGA
Maximum Clock Rate
117.6@Flow-Through/133@Pipelined MHz
Moisture Sensitive
有
Maximum Clock Frequency
133 MHz
Maximum Operating Temperature
+ 85 C
Supply Voltage-Max
2.7 V
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
15
Supply Voltage-Min
1.7 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SyncBurst
Memory Types
SDR
Usage Level
Industrial grade
操作温度
-40 to 85 °C
系列
GS864418E
包装
Tray
类型
同步突发
子类别
Memory & Data Storage
内存大小
72 Mbit
端口的数量
2
电源电流-最大值
235 mA, 285 mA
访问时间
8.5 ns
建筑学
Flow-Through/Pipelined
组织结构
4 M x 18
地址总线宽度
22 Bit
产品类别
SRAM
密度
72 Mbit
筛选水平
Industrial
产品类别
SRAM
GS864418E-133IV拓展信息
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