GSI Technology GS864436E-200I
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GS864436E-200I
2984-GS864436E-200I
存储器
BGA-165
大陆
立即发货

Cache SRAM, 2MX36, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
1最小包装量--
GS864436E-200I详情
GSI Technology GS864436E-200I重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-165
Maximum Clock Rate
153.8@Flow-Through/200@Pipelined MHz
Supplier Package
FBGA
Data Rate Architecture
SDR
Typical Operating Supply Voltage
2.5, 3.3 V
Minimum Operating Supply Voltage
2.3, 3 V
Timing Type
Synchronous
Mounting
表面贴装
Maximum Operating Supply Voltage
2.7, 3.6 V
Number of I/O Lines
36 Bit
Number of Words
2 MWords
Moisture Sensitive
有
Maximum Clock Frequency
200 MHz
Maximum Operating Temperature
+ 85 C
Supply Voltage-Max
3.6 V
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
15
Supply Voltage-Min
2.3 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SyncBurst
Memory Types
SDR
Usage Level
Industrial grade
操作温度
-40 to 85 °C
系列
GS864436E
包装
Tray
类型
同步突发
子类别
Memory & Data Storage
引脚数量
165
内存大小
72 Mbit
端口的数量
4
电源电流-最大值
295 mA, 380 mA
访问时间
6.5 ns
建筑学
Flow-Through/Pipelined
组织结构
2 M x 36
地址总线宽度
21 Bit
产品类别
SRAM
密度
72 Mbit
筛选水平
Industrial
产品类别
SRAM
GS864436E-200I拓展信息
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