GSI Technology GS880E18CGT-250IV
- 收藏
- 对比
GS880E18CGT-250IV
2984-GS880E18CGT-250IV
存储器
TQFP-100
大陆
立即发货

Cache SRAM, 512KX18, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
1最小包装量--
GS880E18CGT-250IV详情
GSI Technology GS880E18CGT-250IV重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TQFP-100
引脚数
100
Supplier Package
TQFP
Data Rate Architecture
SDR
Typical Operating Supply Voltage
1.8, 2.5 V
Minimum Operating Supply Voltage
1.7, 2.3 V
Timing Type
Synchronous
Number of Words
512 kWords
Number of I/O Lines
18 Bit
Maximum Operating Supply Voltage
2, 2.7 V
Mounting
表面贴装
Memory Types
SDR
RoHS
Details
Tradename
SyncBurst
Brand
GSI技术
Manufacturer
GSI技术
Interface Type
Parallel
Mounting Styles
SMD/SMT
Supply Voltage-Min
1.7 V
Factory Pack QuantityFactory Pack Quantity
66
Minimum Operating Temperature
- 40 C
Supply Voltage-Max
2.7 V
Maximum Operating Temperature
+ 85 C
Maximum Clock Frequency
250 MHz
Moisture Sensitive
有
Usage Level
Industrial grade
操作温度
-40 to 85 °C
包装
Tray
系列
GS880E18CGT
类型
DCD
子类别
Memory & Data Storage
内存大小
9 Mbit
端口的数量
2
电源电流-最大值
145 mA, 185 mA
访问时间
5.5 ns
建筑学
Flow-Through/Pipelined
组织结构
512 k x 18
产品类别
SRAM
密度
9 Mbit
筛选水平
Industrial
产品类别
SRAM
GS880E18CGT-250IV拓展信息
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology







哦! 它是空的。