Harris Semiconductor HGT1S14N37G3VLS
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HGT1S14N37G3VLS
1050-HGT1S14N37G3VLS
晶体管 - IGBT - 单个
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Insulated Gate Bipolar Transistor, 14A I(C), N-Channel, TO-263AB, TO-263, 3 PIN
1最小包装量--
HGT1S14N37G3VLS详情
Harris Semiconductor HGT1S14N37G3VLS重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
2
晶体管元件材料
SILICON
Part Life Cycle Code
Transferred
Ihs Manufacturer
HARRIS SEMICONDUCTOR
Package Description
SMALL OUTLINE, R-PSSO-G2
Number of Elements
1
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
ECCN 代码
EAR99
附加功能
LOGIC LEVEL, VOLTAGE CLAMPING, ULTRA FAST SWITCHING
端子位置
SINGLE
终端形式
鸥翼
Reach合规守则
unknown
JESD-30代码
R-PSSO-G2
资历状况
不合格
配置
SINGLE
晶体管应用
电源控制
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-263AB
集电极电流-最大值(IC)
14 A
HGT1S14N37G3VLS拓展信息
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation







哦! 它是空的。