Harris Semiconductor HUF76121D3ST
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HUF76121D3ST
1050-HUF76121D3ST
晶体管 - 特殊用途
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Power Field-Effect Transistor, 20A I(D), 30V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
1最小包装量--
HUF76121D3ST详情
Harris Semiconductor HUF76121D3ST重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
Housing material
PA66, white
终端数量
2
晶体管元件材料
SILICON
外壳材料
1
Gross weight
2.92
Transport packaging size/quantity
42*28*23.5/3000
Part Life Cycle Code
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
Package Description
SMALL OUTLINE, R-PSSO-G2
Drain Current-Max (ID)
20 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Noal voltage
12/24 (DC) Vmin
Wire cross-section
0.3…0.85 mm2
Number of terals
2, blade terminal 6.3 mm non-insulatedmin
ECCN 代码
EAR99
类型
connector (socket) series 7022
附加功能
逻辑电平兼容
端子位置
SINGLE
终端形式
鸥翼
深度
25 mm
Reach合规守则
unknown
JESD-30代码
R-PSSO-G2
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
Operating temperature range
-40…+120 °C
JEDEC-95代码
TO-252AA
漏极-源极导通最大电阻
0.033 Ω
DS 击穿电压-最小值
30 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
高度
18.5 (body) mm
宽度
10 mm
HUF76121D3ST拓展信息
Harris Semiconductor
Harris Semiconductor
Harris Semiconductor
Harris Semiconductor
Harris Semiconductor
Harris Semiconductor
Harris Semiconductor
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