Harris Semiconductor IRFP140

表面安装

NO

Housing material

White ceramic

终端数量

3

晶体管元件材料

SILICON

外壳材料

1

Transport package size/quantity

30*23*13/10000

Time

(max) tripping at I=2.75 x Irated - 2 s

Nominal voltage

250 (AC) V

Weight gross

0.85

Rohs Code

无

Part Life Cycle Code

Transferred

Ihs Manufacturer

HARRIS SEMICONDUCTOR

Package Description

TO-247, 3 PIN

Drain Current-Max (ID)

31 A

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Operating temperature

-60 …+85 °C

JESD-609代码

e0

ECCN 代码

EAR99

端子表面处理

Tin/Lead (Sn/Pb)

端子位置

SINGLE

终端形式

THROUGH-HOLE

深度

20 mm

Reach合规守则

unknown

JESD-30代码

R-PSFM-T3

资历状况

不合格

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

Fuse type

Fast-acting cylindrical melt insert of series ВП2Б-1 (analog)

极性/通道类型

N-CHANNEL

Rated current

6.3 A

JEDEC-95代码

TO-247

漏极-源极导通最大电阻

0.077 Ω

脉冲漏极电流-最大值(IDM)

120 A

DS 击穿电压-最小值

100 V

雪崩能量等级（Eas）

100 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

180 W

Housing diameter

5.2 mm