Infineon 2N6756JANTXV

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.21.00.75

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

14

Maximum Drain Source Resistance (MOhm)

210@10V

Typical Gate Charge @ Vgs (nC)

35(Max)@10V

Typical Gate Charge @ 10V (nC)

35(Max)

Typical Input Capacitance @ Vds (pF)

650@25V

Maximum Power Dissipation (mW)

75000

Typical Fall Time (ns)

45(Max)

Typical Rise Time (ns)

80(Max)

Typical Turn-Off Delay Time (ns)

60(Max)

Typical Turn-On Delay Time (ns)

35(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

通孔

Package Height

7.74(Max)

Package Width

25.53(Max)

Package Length

39.37(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-204-AA

Supplier Package

TO-204AE

Lead Shape

通孔

零件状态

活跃

引脚数量

3

配置

Single

信道型

N