Infineon 2N6847UJANTXV

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

2.1

Maximum Drain Source Resistance (MOhm)

1725@10V

Typical Gate Charge @ Vgs (nC)

15(Max)@10V

Typical Gate Charge @ 10V (nC)

15(Max)

Typical Input Capacitance @ Vds (pF)

330@25V

Maximum Power Dissipation (mW)

14000

Typical Fall Time (ns)

50(Max)

Typical Rise Time (ns)

70(Max)

Typical Turn-Off Delay Time (ns)

40(Max)

Typical Turn-On Delay Time (ns)

50(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

表面贴装

Package Height

2.92(Max)

Package Width

7.49(Max)

Package Length

9.14(Max)

PCB changed

18

Standard Package Name

LLCC

Supplier Package

LLCC

Lead Shape

No Lead

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

零件状态

活跃

引脚数量

18

配置

单六进制漏八进制源双门

信道型

P