2N7002L6327XT详情
Infineon 2N7002L6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
Category
小信号
Process Technology
OptiMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
60
Maximum Gate Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
0.3
Maximum Gate Source Leakage Current (nA)
10
Maximum Drain Source Resistance (MOhm)
3000@10V
Typical Gate Charge @ Vgs (nC)
0.4@10V
Typical Gate Charge @ 10V (nC)
0.4
Typical Gate to Drain Charge (nC)
0.2
Typical Gate to Source Charge (nC)
0.05
Typical Reverse Recovery Charge (nC)
2.4
Typical Input Capacitance @ Vds (pF)
13@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
2@25V
Minimum Gate Threshold Voltage (V)
1.5
Typical Output Capacitance (pF)
4.1
Maximum Power Dissipation (mW)
500
Typical Fall Time (ns)
3.1
Typical Rise Time (ns)
3.3
Typical Turn-Off Delay Time (ns)
5.5
Typical Turn-On Delay Time (ns)
3
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Maximum Power Dissipation on PCB @ TC=25°C (W)
0.5
Maximum Pulsed Drain Current @ TC=25°C (A)
1.2
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
250
Typical Diode Forward Voltage (V)
0.96
Typical Gate Plateau Voltage (V)
4
Typical Reverse Recovery Time (ns)
8.5
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
2.1
Maximum Positive Gate Source Voltage (V)
20
Mounting
表面贴装
Package Height
1(Max)
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Lead Shape
Gull-wing
包装
卷带
零件状态
Obsolete
引脚数量
3
配置
Single
信道型
N
2N7002L6327XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。