Infineon 2N7334JANTX

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

4

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

1

Maximum Drain Source Resistance (MOhm)

800@10V

Typical Gate Charge @ Vgs (nC)

15(Max)@10V

Typical Gate Charge @ 10V (nC)

15(Max)

Typical Input Capacitance @ Vds (pF)

180@25V

Maximum Power Dissipation (mW)

1400

Typical Fall Time (ns)

40(Max)

Typical Rise Time (ns)

25(Max)

Typical Turn-Off Delay Time (ns)

40(Max)

Typical Turn-On Delay Time (ns)

20(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

通孔

Package Height

3.3(Max)

Package Width

7.74(Max)

Package Length

19.3(Max)

PCB changed

14

Standard Package Name

MO-036AB

Supplier Package

MO-036AB

零件状态

活跃

引脚数量

14

配置

Quad

信道型

N