Infineon AUIRF1018ESTRR

表面安装

YES

材料

Si

终端数量

2

晶体管元件材料

SILICON

EU RoHS

符合免除

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

79

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

20

Maximum Drain Source Resistance (mOhm)

8.4@10V

Typical Gate Charge @ Vgs (nC)

46@10V

Typical Gate Charge @ 10V (nC)

46

Typical Input Capacitance @ Vds (pF)

2290@50V

Maximum Power Dissipation (mW)

110000

Typical Fall Time (ns)

46

Typical Rise Time (ns)

35

Typical Turn-Off Delay Time (ns)

55

Typical Turn-On Delay Time (ns)

13

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Supplier Temperature Grade

汽车

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.65(Max)

Package Length

10.67(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

30

Operating Temperature-Max

175 °C

Rohs Code

有

Manufacturer Part Number

AUIRF1018ESTRR

Package Shape

RECTANGULAR

Manufacturer

International Rectifier

Number of Elements

1

Part Life Cycle Code

Transferred

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

5.7

Part Package Code

D2PAK

Drain Current-Max (ID)

79 A

包装

卷带

JESD-609代码

e3

无铅代码

有

零件状态

Obsolete

ECCN 代码

EAR99

端子表面处理

镍外哑光锡

附加功能

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

子类别

FET 通用电源

端子位置

SINGLE

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

compliant

引脚数量

3

JESD-30代码

R-PSSO-G2

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-263AB

最大漏极电流 (Abs) (ID)

79 A

漏极-源极导通最大电阻

0.0084 Ω

脉冲漏极电流-最大值(IDM)

315 A

DS 击穿电压-最小值

60 V

信道型

N

雪崩能量等级（Eas）

88 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

110 W