Infineon AUIRF7734M2TR1

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

DirectFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

17

Maximum Drain Source Resistance (mOhm)

4.9@10V

Typical Gate Charge @ Vgs (nC)

48@10V

Typical Gate Charge @ 10V (nC)

48

Typical Input Capacitance @ Vds (pF)

2545@25V

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

45

Typical Rise Time (ns)

49

Typical Turn-Off Delay Time (ns)

42

Typical Turn-On Delay Time (ns)

13

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Supplier Temperature Grade

汽车

Mounting

表面贴装

Package Height

0.49(Max)

Package Width

5.05(Max)

Package Length

5.45(Max)

PCB changed

7

Supplier Package

Direct-FET M2

Lead Shape

No Lead

包装

卷带

零件状态

Obsolete

引脚数量

7

配置

单四漏双源

信道型

N