Infineon AUIRF7799L2TR1

表面安装

YES

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

DirectFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

250

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

6.6

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

20

Maximum Drain Source Resistance (MOhm)

38@10V

Typical Gate Charge @ Vgs (nC)

110@10V

Typical Gate Charge @ 10V (nC)

110

Typical Input Capacitance @ Vds (pF)

6714@25V

Maximum Power Dissipation (mW)

4300

Typical Fall Time (ns)

26.6

Typical Rise Time (ns)

33.5

Typical Turn-Off Delay Time (ns)

73.9

Typical Turn-On Delay Time (ns)

36.3

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Supplier Temperature Grade

汽车

Mounting

表面贴装

Package Height

0.49(Max)

Package Width

9.15(Max)

Package Length

7.1(Max)

PCB changed

15

Supplier Package

Direct-FET L8

Lead Shape

No Lead

Operating Temperature-Max

175 °C

Rohs Code

有

Manufacturer Part Number

AUIRF7799L2TR1

Manufacturer

International Rectifier

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

5.24

包装

卷带

零件状态

Obsolete

子类别

FET 通用电源

Reach合规守则

unknown

引脚数量

15

配置

单六正八负极

操作模式

增强型MOSFET

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

35 A

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

125 W