Infineon AUIRFI3205

表面安装

NO

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

64

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

8@10V

Typical Gate Charge @ Vgs (nC)

170(Max)@10V

Typical Gate Charge @ 10V (nC)

170(Max)

Typical Input Capacitance @ Vds (pF)

4000@25V

Maximum Power Dissipation (mW)

63000

Typical Fall Time (ns)

70

Typical Rise Time (ns)

100

Typical Turn-Off Delay Time (ns)

43

Typical Turn-On Delay Time (ns)

14

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Supplier Temperature Grade

汽车

Mounting

通孔

Package Height

16.13(Max)

Package Width

4.83(Max)

Package Length

10.75(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-220AB Full-Pak

Lead Shape

通孔

Package Description

,

Operating Temperature-Max

175 °C

Rohs Code

有

Manufacturer Part Number

AUIRFI3205

Manufacturer

International Rectifier

Part Life Cycle Code

Transferred

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

5.21

包装

Tube

零件状态

Obsolete

子类别

FET 通用电源

Reach合规守则

unknown

引脚数量

3

配置

Single

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

64 A

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

63 W