Infineon AUIRL7736M2TR1

表面安装

YES

材料

Si

终端数量

5

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

DirectFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±16

Maximum Continuous Drain Current (A)

22

Maximum Drain Source Resistance (mOhm)

3@10V

Typical Gate Charge @ Vgs (nC)

[email protected]

Typical Input Capacitance @ Vds (pF)

5055@25V

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

76

Typical Rise Time (ns)

210

Typical Turn-Off Delay Time (ns)

56

Typical Turn-On Delay Time (ns)

48

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Supplier Temperature Grade

汽车

Mounting

表面贴装

Package Height

0.49(Max)

Package Width

5.05(Max)

Package Length

5.45(Max)

PCB changed

9

Supplier Package

Direct-FET M4

Package Description

CHIP CARRIER, R-XBCC-N5

Package Style

CHIP CARRIER

Moisture Sensitivity Levels

1

Package Body Material

UNSPECIFIED

Reflow Temperature-Max (s)

40

Operating Temperature-Max

175 °C

Rohs Code

有

Manufacturer Part Number

AUIRL7736M2TR1

Package Shape

RECTANGULAR

Manufacturer

International Rectifier

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

5.39

Drain Current-Max (ID)

22 A

包装

卷带

JESD-609代码

e3

无铅代码

有

零件状态

Obsolete

ECCN 代码

EAR99

端子表面处理

哑光锡

附加功能

HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

子类别

FET 通用电源

端子位置

BOTTOM

终端形式

无铅

峰值回流焊温度（摄氏度）

260

Reach合规守则

compliant

引脚数量

9

JESD-30代码

R-XBCC-N5

资历状况

不合格

配置

单四路漏极四路源极

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

112 A

漏极-源极导通最大电阻

0.003 Ω

脉冲漏极电流-最大值(IDM)

450 A

DS 击穿电压-最小值

40 V

信道型

N

雪崩能量等级（Eas）

119 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

63 W