Infineon AUIRLR2908TR

表面安装

YES

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

80

Maximum Gate Source Voltage (V)

±16

Maximum Gate Threshold Voltage (V)

2.5

Maximum Continuous Drain Current (A)

39

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

20

Maximum Drain Source Resistance (MOhm)

28@10V

Typical Gate Charge @ Vgs (nC)

[email protected]

Typical Input Capacitance @ Vds (pF)

1890@25V

Maximum Power Dissipation (mW)

120000

Typical Fall Time (ns)

55

Typical Rise Time (ns)

95

Typical Turn-Off Delay Time (ns)

36

Typical Turn-On Delay Time (ns)

12

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Supplier Temperature Grade

汽车

Mounting

表面贴装

Package Height

2.39(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Lead Shape

Gull-wing

Package Description

,

Operating Temperature-Max

175 °C

Rohs Code

有

Manufacturer Part Number

AUIRLR2908TR

Manufacturer

International Rectifier

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

5.16

包装

卷带

零件状态

Obsolete

子类别

FET 通用电源

Reach合规守则

unknown

引脚数量

3

配置

Single

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

30 A

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

120 W