Infineon AUIRLR2908TRL

表面安装

YES

材料

Si

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

80

Maximum Gate Source Voltage (V)

±16

Maximum Gate Threshold Voltage (V)

2.5

Maximum Continuous Drain Current (A)

39

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

20

Maximum Drain Source Resistance (MOhm)

4.2@10V

Typical Gate Charge @ Vgs (nC)

[email protected]

Typical Input Capacitance @ Vds (pF)

1890@25V

Maximum Power Dissipation (mW)

120000

Typical Fall Time (ns)

55

Typical Rise Time (ns)

95

Typical Turn-Off Delay Time (ns)

36

Typical Turn-On Delay Time (ns)

12

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Supplier Temperature Grade

汽车

Mounting

表面贴装

Package Height

2.39(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Lead Shape

Gull-wing

Package Description

,

Moisture Sensitivity Levels

1

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

175 °C

Rohs Code

有

Manufacturer Part Number

AUIRLR2908TRL

Manufacturer

Infineon Technologies AG

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

6.97

包装

卷带

零件状态

Obsolete

ECCN 代码

EAR99

子类别

FET 通用电源

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

3

配置

Single

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

30 A

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

120 W