Infineon AUIRLR3105TRL

EU RoHS

符合免除

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±16

Maximum Gate Threshold Voltage (V)

3

Maximum Continuous Drain Current (A)

25

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

20

Maximum Drain Source Resistance (MOhm)

37@10V

Typical Gate Charge @ Vgs (nC)

20(Max)@5V

Typical Gate to Drain Charge (nC)

6

Typical Input Capacitance @ Vds (pF)

710@25V

Maximum Power Dissipation (mW)

57000

Typical Fall Time (ns)

37

Typical Rise Time (ns)

57

Typical Turn-Off Delay Time (ns)

25

Typical Turn-On Delay Time (ns)

8

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

2.39(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Lead Shape

Gull-wing

包装

卷带

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N