Infineon AUXIRSAMPLES (AUIRFN8401TR)

材料

Si

EU RoHS

符合免除

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

3.9

Maximum Continuous Drain Current (A)

84

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

4.6@10V

Typical Gate Charge @ Vgs (nC)

44@10V

Typical Gate Charge @ 10V (nC)

44

Typical Input Capacitance @ Vds (pF)

2170@25V

Maximum Power Dissipation (mW)

4200

Typical Fall Time (ns)

12

Typical Rise Time (ns)

13

Typical Turn-Off Delay Time (ns)

22

Typical Turn-On Delay Time (ns)

6.1

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Supplier Temperature Grade

汽车

Mounting

表面贴装

Package Height

1.1

Package Width

5.76

Package Length

4.98

PCB changed

8

Supplier Package

PQFN

包装

卷带

零件状态

Obsolete

引脚数量

8

配置

单四漏三源

信道型

N