Infineon BC847BE6327XT

包装/外壳

SOT-23-3

Qualification

AEC-Q101

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

330 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

200

Collector-Emitter Saturation Voltage

200 mV

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

48000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

250 MHz

Part # Aliases

E6327 SP000010559 BC 847B BC847BE6327HTSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Maximum DC Collector Current

100 mA

DC Current Gain hFE Max

450

RoHS

Details

Collector- Emitter Voltage VCEO Max

45 V

包装

Reel

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

50 V

连续集电极电流

100 mA

产品类别

Bipolar Transistors - BJT