Infineon BCR108E6327XT

包装/外壳

SOT-23

Qualification

AEC-Q101

Pd - Power Dissipation

200 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

70

Unit Weight

0.000282 oz

Factory Pack QuantityFactory Pack Quantity

39000

Mounting Styles

SMD/SMT

Part # Aliases

BCR 108 E6327 SP000010736 BCR108E6327HTSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

50 V

包装

Reel

子类别

Transistors

产品类别

BJTs - Bipolar Transistors - Pre-Biased

连续集电极电流

100 mA

产品类别

Bipolar Transistors - Pre-Biased