BFG196E6327XT详情
Infineon BFG196E6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
材料
Si
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
有
PPAP
Unknown
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
20
Maximum Collector-Emitter Voltage (V)
12
Maximum Collector-Emitter Voltage Range (V)
&l;20
Maximum Emitter Base Voltage (V)
2
Maximum DC Collector Current (A)
0.15
Maximum DC Collector Current Range (A)
0.12 to 0.5
Minimum DC Current Gain
70@50mA@8V
Minimum DC Current Gain Range
50 to 120
Maximum Power Dissipation (mW)
800
Maximum Transition Frequency (MHz)
7500(Typ)
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
1.6
Package Width
3.5
Package Length
6.5
PCB changed
3
Tab
Tab
Standard Package Name
SOT
Supplier Package
SOT-223
Lead Shape
Gull-wing
包装
卷带
零件状态
Obsolete
类型
NPN
引脚数量
4
配置
单双发射器
BFG196E6327XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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