Infineon BFP450E6327T

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

Number of Elements per Chip

1

Maximum Collector Base Voltage (V)

15

Maximum Collector-Emitter Voltage (V)

4.5

Maximum Collector-Emitter Voltage Range (V)

&l;20

Maximum Emitter Base Voltage (V)

1.5

Maximum DC Collector Current (A)

0.17

Maximum DC Collector Current Range (A)

0.12 to 0.5

Maximum Emitter Cut-Off Current (nA)

3000

Maximum Collector Cut-Off Current (nA)

30

Operational Bias Conditions

3V/90mA

Minimum DC Current Gain

50@90mA@3V|60@50mA@4V

Minimum DC Current Gain Range

50 to 120

Typical Input Capacitance (pF)

1.2

Typical Output Capacitance (pF)

0.48

Maximum Power Dissipation (mW)

500

Maximum Power 1dB Compression (dBm)

19(Typ)

Typical Power Gain (dB)

35.5

Maximum 3rd Order Intercept Point (dBm)

31(Typ)

Maximum Transition Frequency (MHz)

24000(Typ)

Maximum Noise Figure (dB)

32(Typ)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

包装

卷带

零件状态

Obsolete

类型

NPN

配置

单双发射器