Infineon BFR193E6327T

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

Number of Elements per Chip

1

Maximum Collector Base Voltage (V)

20

Maximum Collector-Emitter Voltage (V)

12

Maximum Collector-Emitter Voltage Range (V)

&l;20

Maximum Emitter Base Voltage (V)

2

Maximum DC Collector Current (A)

0.08

Maximum DC Collector Current Range (A)

0.06 to 0.12

Maximum Emitter Cut-Off Current (nA)

1000

Maximum Collector Cut-Off Current (nA)

100

Operational Bias Conditions

8V/30mA

Minimum DC Current Gain

70@30mA@8V

Minimum DC Current Gain Range

50 to 120

Typical Input Capacitance (pF)

2.25

Typical Output Capacitance (pF)

0.66

Maximum Power Dissipation (mW)

580

Typical Power Gain (dB)

15

Maximum Transition Frequency (MHz)

8000(Typ)

Maximum Noise Figure (dB)

1.6(Typ)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

汽车

包装

卷带

零件状态

Unconfirmed

类型

NPN

配置

Single