BFR949L3E6327XT详情
Infineon BFR949L3E6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
3
材料
Si
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
有
PPAP
Unknown
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
20
Maximum Collector-Emitter Voltage (V)
10
Maximum Collector-Emitter Voltage Range (V)
&l;20
Maximum Emitter Base Voltage (V)
1.5
Maximum DC Collector Current (A)
0.05
Maximum DC Collector Current Range (A)
0.001 to 0.06
Minimum DC Current Gain
100@5mA@6V
Minimum DC Current Gain Range
50 to 120
Maximum Power Dissipation (mW)
250
Maximum Transition Frequency (MHz)
9000(Typ)
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
0.45(Max)
Package Width
0.6
Package Length
1
PCB changed
3
Standard Package Name
TSLP
Supplier Package
TSLP
Lead Shape
No Lead
RoHS
Compliant
包装
卷带
零件状态
Obsolete
类型
NPN
引脚数量
3
配置
Single
BFR949L3E6327XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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