BFS481E6327XT详情
Infineon BFS481E6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
底架
表面贴装
引脚数
6
材料
Si
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
有
PPAP
Unknown
Number of Elements per Chip
2
Maximum Collector Base Voltage (V)
20
Maximum Collector-Emitter Voltage (V)
12
Maximum Collector-Emitter Voltage Range (V)
&l;20
Maximum Emitter Base Voltage (V)
2
Maximum DC Collector Current (A)
0.02
Maximum DC Collector Current Range (A)
0.001 to 0.06
Maximum Emitter Cut-Off Current (nA)
1000
Maximum Collector Cut-Off Current (nA)
100
Operational Bias Conditions
8V/5mA
Minimum DC Current Gain
70@5mA@8V
Minimum DC Current Gain Range
50 to 120
Typical Input Capacitance (pF)
0.4
Typical Output Capacitance (pF)
0.23
Maximum Power Dissipation (mW)
175
Typical Power Gain (dB)
20
Maximum Transition Frequency (MHz)
8000(Typ)
Maximum Noise Figure (dB)
1.2(Typ)
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
汽车
Mounting
表面贴装
Package Height
0.9(Max)
Package Width
1.25
Package Length
2
PCB changed
6
Standard Package Name
SOT
Supplier Package
SOT-363
Lead Shape
Gull-wing
Number of Elements
2
RoHS
Compliant
包装
卷带
零件状态
Obsolete
类型
NPN
最高工作温度
150 °C
最小工作温度
-65 °C
频率
8 GHz
引脚数量
6
极性
NPN
配置
Dual
功率耗散
175 mW
集电极发射器电压(VCEO)
12 V
集电极基极电压(VCBO)
20 V
发射极基极电压 (VEBO)
2 V
BFS481E6327XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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