Infineon BFY420(ES)

表面安装

YES

材料

Si

终端数量

4

晶体管元件材料

SILICON

EU RoHS

不合规

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Number of Elements per Chip

1

Maximum Collector Base Voltage (V)

15

Maximum Collector-Emitter Voltage (V)

4.5

Maximum Collector-Emitter Voltage Range (V)

&l;20

Maximum Emitter Base Voltage (V)

1.5

Maximum DC Collector Current (A)

0.035

Maximum DC Collector Current Range (A)

0.001 to 0.06

Maximum Emitter Cut-Off Current (nA)

20000

Maximum Collector Cut-Off Current (nA)

30

Operational Bias Conditions

2V/20mA

Minimum DC Current Gain

50@5mA@1V

Minimum DC Current Gain Range

50 to 120

Typical Input Capacitance (pF)

0.67

Typical Output Capacitance (pF)

0.14

Maximum Power Dissipation (mW)

160

Maximum Power 1dB Compression (dBm)

12(Typ)

Typical Power Gain (dB)

21

Maximum Transition Frequency (MHz)

22000(Typ)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

0.95

Package Width

1.78

Package Length

1.78

PCB changed

4

Standard Package Name

Micro-X

Supplier Package

Micro-X

Package Description

DISK BUTTON, O-CRDB-F4

Package Style

磁盘按钮

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Operating Temperature-Max

175 °C

Transition Frequency-Nom (fT)

22000 MHz

Manufacturer Part Number

BFY420(ES)

Package Shape

ROUND

Manufacturer

Infineon Technologies AG

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.11

JESD-609代码

e3

零件状态

活跃

ECCN 代码

EAR99

类型

NPN

端子表面处理

哑光锡

附加功能

低噪音

子类别

其他晶体管

端子位置

RADIAL

终端形式

FLAT

Reach合规守则

compliant

引脚数量

4

参考标准

ESA-SCC-5611/008

JESD-30代码

O-CRDB-F4

资历状况

不合格

配置

单双发射器

箱体转运

EMITTER

晶体管应用

AMPLIFIER

极性/通道类型

NPN

集电极电流-最大值(IC)

0.035 A

最小直流增益（hFE）

50

集电极-发射器电压-最大值

4.5 V

最高频段

X 频带

集电极-基极电容-最大值

0.9 pF