BFY640(T580)详情
Infineon BFY640(T580)重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
材料
SiGe
EU RoHS
供应商未确认
ECCN (US)
EAR99
Automotive
无
PPAP
无
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
13
Maximum Collector-Emitter Voltage (V)
4
Maximum Collector-Emitter Voltage Range (V)
&l;20
Maximum Emitter Base Voltage (V)
1.2
Maximum DC Collector Current (A)
0.05
Maximum DC Collector Current Range (A)
0.001 to 0.06
Minimum DC Current Gain
135@30mA@3V
Minimum DC Current Gain Range
120 to 200
Typical Power Gain (dB)
24
Maximum Transition Frequency (MHz)
40000(Typ)
Maximum Noise Figure (dB)
1.1(Typ)
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
175
Mounting
表面贴装
Package Height
0.95
Package Width
1.78
Package Length
1.78
PCB changed
4
Standard Package Name
Micro-X
Supplier Package
Micro-X
零件状态
Unconfirmed
类型
NPN
引脚数量
4
配置
Single
BFY640(T580)拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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