BSC024N025SGXT详情
Infineon BSC024N025SGXT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
8
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
Category
功率MOSFET
Process Technology
OptiMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
25
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
27
Maximum Drain Source Resistance (mOhm)
2.4@10V
Typical Gate Charge @ Vgs (nC)
39@5V
Typical Input Capacitance @ Vds (pF)
4910@15V
Maximum Power Dissipation (mW)
2800
Typical Fall Time (ns)
7
Typical Rise Time (ns)
9
Typical Turn-Off Delay Time (ns)
39
Typical Turn-On Delay Time (ns)
8.9
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
1
Package Width
5.9
Package Length
5.15
PCB changed
8
Standard Package Name
SON
Supplier Package
TDSON EP
Lead Shape
No Lead
RoHS
Compliant
包装
卷带
零件状态
Obsolete
引脚数量
8
配置
单四漏三源
信道型
N
BSC024N025SGXT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。