BSC032N03ST详情
Infineon BSC032N03ST重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
8
ECCN (US)
EAR99
HTS
8541.29.00.95
Automotive
无
PPAP
无
Category
功率MOSFET
Process Technology
OptiMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
30
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
23
Maximum Drain Source Resistance (MOhm)
3.2@10V
Typical Gate Charge @ Vgs (nC)
29@5V
Typical Input Capacitance @ Vds (pF)
3820@15V
Maximum Power Dissipation (mW)
2800
Typical Fall Time (ns)
5.4
Typical Rise Time (ns)
7
Typical Turn-Off Delay Time (ns)
32
Typical Turn-On Delay Time (ns)
7.5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
1
Package Width
5.9
Package Length
5.15
PCB changed
8
Standard Package Name
SON
Lead Shape
No Lead
Supplier Package
TDSON EP
RoHS
Non-Compliant
包装
卷带
零件状态
Unconfirmed
引脚数量
8
配置
单四漏三源
信道型
N
BSC032N03ST拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。