Infineon BSC032N03SZT

Maximum Drain Source Resistance (mOhm)

3.2@10V

Typical Gate Charge @ Vgs (nC)

29@5V

Typical Input Capacitance @ Vds (pF)

3820@15V

Maximum Power Dissipation (mW)

2800

Typical Fall Time (ns)

5.4

Typical Rise Time (ns)

7

Typical Turn-Off Delay Time (ns)

32

Typical Turn-On Delay Time (ns)

7.5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1

Package Width

5.9

Package Length

5.15

PCB changed

8

Standard Package Name

SON

Supplier Package

TDSON EP

Lead Shape

No Lead

Maximum Continuous Drain Current (A)

23

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

30

Number of Elements per Chip

1

Channel Mode

Enhancement

Process Technology

OptiMOS

Category

功率MOSFET

PPAP

无

Automotive

无

HTS

8541.29.00.95

ECCN (US)

EAR99

EU RoHS

供应商未确认

零件状态

Unconfirmed

引脚数量

8

配置

单四漏三源

信道型

N