Infineon BSC048N025SGXT

底架

表面贴装

引脚数

8

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

25

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

19

Maximum Drain Source Resistance (MOhm)

4.8@10V

Typical Gate Charge @ Vgs (nC)

16@5V

Typical Input Capacitance @ Vds (pF)

2010@15V

Maximum Power Dissipation (mW)

2800

Typical Fall Time (ns)

4

Typical Rise Time (ns)

5

Typical Turn-Off Delay Time (ns)

22

Typical Turn-On Delay Time (ns)

5.7

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1

Package Width

5.9

Package Length

5.15

PCB changed

8

Standard Package Name

SON

Supplier Package

TDSON EP

Lead Shape

No Lead

Number of Elements

1

RoHS

Compliant

包装

卷带

零件状态

Obsolete

最高工作温度

150 °C

最小工作温度

-55 °C

引脚数量

8

配置

单四漏三源

功率耗散

2.8 W

连续放电电流(ID)

19 A

栅极至源极电压(Vgs)

20 V

信道型

N