Infineon BSC059N03SGT

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

17.5

Maximum Drain Source Resistance (mOhm)

5.5@10V

Typical Gate Charge @ Vgs (nC)

15@5V

Typical Input Capacitance @ Vds (pF)

2010@15V

Maximum Power Dissipation (mW)

2800

Typical Fall Time (ns)

3.8

Typical Rise Time (ns)

4.8

Typical Turn-Off Delay Time (ns)

22

Typical Turn-On Delay Time (ns)

5.7

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

零件状态

Obsolete

配置

单四漏三源

信道型

N